Materials Science

High-k Gate Dielectric Materials Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) Editors: Niladri Pratap Maity, PhD Reshmi Maity, PhD Srimanta Baishya, PhD Ordering Info/Buy Book

Published. Available now. Pub Date: December 2020 Hardback Price: see ordering info Hard ISBN: 9781771888431 E-Book ISBN: 9780429325779 Pages: 264pp w/index Binding Type: Hardback Notes: 24 color and 79 b/w illustrations

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Reviews
“An extraordinary collection of chapters that cover the important topics that focus on limitations and challenges of SiO2 based MOSFET, the structural properties and application of the selected high-k dielectric materials for future generation of CMOS IC technology, analysis of interface charge densities with the high-k material Tantalum Pentoxide, the description of high-k material processing in CMOS VLSI technology, analysis of working and modeling of Tunnel FET and the Heusler compound material for optoelectronic, thermoelectric, and spintronic applications. This book is nearly an encyclopedia of well-being that focuses on the fundamentals and the successful integration of high-k dielectric materials in future IC technology.”
—Vladica Stojanović, PhD, Professor, University of Kosovska Mitrovica and University of Criminal Investigation & Police Studies, Belgrade, Serbia

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This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components (or Moore’s law).

This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. Then it discusses the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the different deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book.

The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling.

This timely volume addresses the challenges of high-k gate dielectric materials and will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.

Key features:

• Discusses the state-of-the-art in high-k gate dielectric research for MOSFET in the nanoelectronics regime
• Reviews high-k applications in advanced MOS transistor structures
• Considers CMOS IC fabrication with high-k gate dielectric materials

CONTENTS:
Preface

1. Moore’s Law: In the 21st Century
Niladri Pratap Maity and Reshmi Maity

2. SiO2 Based MOS Devices: Leakage and Limitations
Niladri Pratap Maity and Reshmi Maity

3. High-? Dielectric Materials: Structural Properties and Selection
P. Sri Harsha, K. Venkata Saravanan, and V. Madhurima

4. Selection of High-? Dielectric Materials
Niladri Pratap Maity and Reshmi Maity

5. Tunneling Current Density and Tunnel Resistivity: Application to High-? Material HfO2
Niladri Pratap Maity and Reshmi Maity

6. Analysis of Interface Charge Density: Application to High-? Material Tantalum Pentoxide
Niladri Pratap Maity and Reshmi Maity

7. High-? Material Processing in CMOS VLSI Technology
Partha Pratim Sahu

8. Tunnel FET: Working, Structure, and Modeling
S. Baishya

9. Heusler Compound: A Novel Material for Optoelectronic, Thermoelectric, and Spintronic Applications
D. P. Rai

Index

About the Authors / Editors:
Editors: Niladri Pratap Maity, PhD
Associate Professor, Department of Electronics and Communication Engineering, Mizoram University, India

Niladri Pratap Maity, PhD, is an Associate Professor in the Department of Electronics and Communication Engineering at Mizoram University (A Central University), India. He is the author of more than 110 journal articles and conference papers. He has been nominated for and selected as a Visiting Scientist by the Department of Science and Technology, Government. of India, India. He is a recipient of several best/excellent paper awards. His research interests include VLSI design, MOS device modeling, and MEMS. Dr. Maity received a master’s degree in Electronics from Sambalpur University, India, a master’s degree in Electronics Design and Technology from Tezpur University (A Central University), Tezpur, India, and a PhD degree in Electronics and Communication Engineering from the National Institute of Technology, Silchar, India.

Reshmi Maity, PhD
Assistant Professor, Department of Electronics and Communication Engineering, Mizoram University, Aizawl, India

Reshmi Maity, PhD, is an Assistant Professor in the Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, India. Prior to that, she was an Assistant Professor at the JIS College of Engineering (West Bengal University of Technology) at Kolkata, India. She is the author of more than 80 refereed publications. Her research interests include VLSI design, nanoelectronics, and MEMS. She received her BTech and MTech degrees in Radio Physics and Electronics from the University of Calcutta, Kolkata, India. She has completed her PhD degree in Electronics and Communication Engineering at the National Institute of Technology, Silchar, India.

Srimanta Baishya, PhD
Professor, Department of Electronics and Communication Engineering, National Institute of Technology Silchar, India

Srimanta Baishya, PhD, is a Professor in the Department of Electronics and Communication Engineering at the National Institute of Technology Silchar, India. Prior to that, he was an Assistant Professor in the Department of Electronics and Telecommunication Engineering of the same college. His research interests cover semiconductor devices and circuits, MOS transistor modeling, and MEMS-based energy harvesting. He has published over 60 papers in peer-reviewed journals. Dr. Baishya is a senior member of the IEEE and a Fellow of the Institution of Engineers (India). He received his BE degree from the Assam Engineering College, Guwahat, India; MTech degree from IIT Kanpur, both in Electrical Engineering; and PhD degree in Engineering from Jadavpur University, Kolkata, India.

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